Magnetoresistive effect sensor with barrier layer smoothed...

Details Magnetoresistive effect sensor with barrier layer smoothed... Magnetoresistive effect sensor with barrier layer smoothed...

2005-06-07

2005-06-07

Renner, Craig A. (Department: 2652)

Dynamic magnetic information storage or retrieval

Head

Magnetoresistive reproducing head

C360S319000

Reexamination Certificate

active

06903908

ABSTRACT:
A magnetoresistive effect sensor uses a shielded-type magnetoresistive effect element using a magnetoresistive effect film formed by a basic configuration of a combination of a free layer, a barrier layer formed on the free layer, and a fixed layer formed on the barrier layer, wherein a sensing current flows substantially perpendicular to the magnetoresistive effect film, and wherein an amorphous material or a microcrystalline material is used in a lower shield.

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patent: 6490139 (2002-12-01), Hayashi et al.
patent: 10-163544 (1998-06-01), None
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patent: 11-316919 (1999-11-01), None
patent: 2000-11333 (2000-01-01), None
patent: 2000-101164 (2000-04-01), None
Japanese Office Action dated Jan. 25, 2005 with English translation of pertinent portions.

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