Dynamic magnetic information storage or retrieval – Head – Hall effect
Patent
1996-01-31
1999-04-06
Evans, Jefferson
Dynamic magnetic information storage or retrieval
Head
Hall effect
G11B 539
Patent
active
058926410
ABSTRACT:
A central region susceptible to medium magnetic field is formed. End regions (13 to 15) sandwich and extend from the ends of the central region, and apply a vertical bias to the central region. These regions are formed on a substrate (1 to 5). The central region comprises a laminate layer having a SAL layer (5), a magnetic separation layer (6), a magnetoresistance layer (8), and an insulating layer (9), these layers being nearer the substrate in the mentioned order. The thicknesses of the individual layers, particularly the thickness of the insulating layer, are controlled to satisfy a relation of the thicknesses and ion milling rates of the layers given as:
REFERENCES:
patent: 4036638 (1977-07-01), Ray et al.
patent: 4103315 (1978-07-01), Hempstead et al.
patent: 4825325 (1989-04-01), Howard
patent: 5018037 (1991-05-01), Krouni et al.
patent: 5258884 (1993-11-01), Howard et al.
patent: 5408377 (1995-04-01), Gurney et al.
patent: 5434826 (1995-07-01), Ravipati et al.
patent: 5436778 (1995-07-01), Lin et al.
patent: 5462795 (1995-10-01), Shino et al.
patent: 5641557 (1997-06-01), Ishiwata
patent: 5668687 (1997-09-01), Chen et al.
Evans Jefferson
NEC Corporation
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