Magnetoresistive effect element with resistance adjustment...

Details Magnetoresistive effect element with resistance adjustment... Magnetoresistive effect element with resistance adjustment...

2011-03-01

2011-03-01

Klimowicz, William J (Department: 2627)

Dynamic magnetic information storage or retrieval

Head

Magnetoresistive reproducing head

C360S324100, C360S324200

Reexamination Certificate

active

07898774

ABSTRACT:
A spin valve type magnetoresistive effect element for vertical electric conduction includes a magnetoresistive effect film in which a resistance adjustment layer made of a material containing conductive carriers not more than 1022/cm3is inserted. Thus the resistance value of a portion in change of spin-relied conduction is raised to an adequate value, thereby to increase the resistance variable amount.

REFERENCES:
patent: 4916495 (1990-04-01), Awano
patent: 5005064 (1991-04-01), Yoshino et al.
patent: 5132749 (1992-07-01), Nishibayashi et al.
patent: 5436754 (1995-07-01), Ishihara et al.
patent: 5636093 (1997-06-01), Gijs et al.
patent: 5715121 (1998-02-01), Sakakima et al.
patent: 5973334 (1999-10-01), Mizushima et al.
patent: 5986858 (1999-11-01), Sato et al.
patent: 6144546 (2000-11-01), Mizushima et al.
patent: 6272036 (2001-08-01), You et al.
patent: 6473275 (2002-10-01), Gill
patent: 6563681 (2003-05-01), Sasaki et al.
patent: 6697405 (2004-02-01), Kitatani et al.
patent: 6721149 (2004-04-01), Shi et al.
patent: 6756135 (2004-06-01), Hasegawa et al.
patent: 2001/0033463 (2001-10-01), Mizuguchi
patent: 2002/0020892 (2002-02-01), Shima
patent: 2002/0048128 (2002-04-01), Kamiguchi et al.
patent: 2002/0131215 (2002-09-01), Beach
patent: 2003/0011945 (2003-01-01), Yuasa et al.
patent: 2003/0021071 (2003-01-01), Kula et al.
patent: 2003/0021107 (2003-01-01), Howell et al.
patent: 03085762 (1991-04-01), None
patent: 2000-106462 (2000-04-01), None
patent: 2000-200408 (2000-07-01), None
Google Search Report I.
Google Search Report II.
U.S. Appl. No. 12/409,654, filed Mar. 24, 2009, Yoshikawa, et al.

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