Semiconductor device manufacturing: process – Having magnetic or ferroelectric component
Reexamination Certificate
2007-08-28
2007-08-28
Lebentritt, Michael (Department: 2812)
Semiconductor device manufacturing: process
Having magnetic or ferroelectric component
C360S315000, C360S324200, C360S325000, C257SE21665
Reexamination Certificate
active
10492147
ABSTRACT:
In a magnetoresistive effect element using a ferromagnetic tunnel junction having a tunnel barrier layer sandwiched between at least a pair of ferromagnetic layers, a magnetization free layer comprising one of the ferromagnetic layers is composed of a single layer of a material having an amorphous or microcrystal structure or a material layer the main portion of which has an amorphous or microcrystal structure. The magnetoresistive effect element can produce excellent magnetic-resistance characteristics, and a magnetic memory element and a magnetic memory device using the magnetoresistive effect element as a memory element thereof can improve both of write and read characteristics at the same time.
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Bessho Kazuhiro
Endo Keitaro
Hayashi Kazuhiko
Higo Yutaka
Hosomi Masanori
Lebentritt Michael
Pompey Ron
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