Magnetoresistive effect element, magnetic head and magnetic...

Dynamic magnetic information storage or retrieval – Head – Magnetoresistive reproducing head

Reexamination Certificate

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Reexamination Certificate

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07808747

ABSTRACT:
A magnetoresistive effect element includes a fixed magnetization layer; a free magnetization layer; a nonmagnetic spacer layer between the fixed magnetization layer and the free magnetization layer; and an insertion layer disposed on an opposite side of the free magnetization layer from the nonmagnetic spacer layer, wherein the first insulating layer has an oxide, a nitride, or an oxynitride including at least one kind of element selected from a group constituted of Al (aluminum), Si (silicon), Mg (magnesium), Ta (tantalum) and Zn (zinc) as a major constituent, and the insertion layer has an oxide, a nitride, or an oxynitride including at least one kind of element selected from a group constituted of Al (aluminum), Si (silicon), Mg (magnesium), Ta (tantalum) and Zn (zinc) as a major constituent.

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First Office Action issued on Aug. 29, 2008, in Chinese Patent Application No. 200710078832.5 and English-language translation thereof.

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