Electricity: measuring and testing – Magnetic – Magnetometers
Patent
1997-11-20
2000-10-17
Snow, Walter E.
Electricity: measuring and testing
Magnetic
Magnetometers
338 32R, 360113, 428692, G01R 3302, G11B 539, H01L 4302
Patent
active
061337323
ABSTRACT:
A magnetoresistive effect element comprises a base layer, an antiferromagnetic layer extending over the base layer, a pinned magnetic layer extending over the antiferromagnetic layer, a first non-magnetic layer extending over the pinned magnetic layer, and a free magnetic layer extending over the first non-magnetic layer, wherein the pinned magnetic layer includes at least one selected from the group consisting of Co-based materials, Ni-based materials, Fe-based materials and alloys thereof, and wherein the free magnetic layer includes at least one selected from the group consisting of amorphous magnetic materials, iron nitride based materials, Sendust and alloys based on Co, Fe, Ni, NiFe, NiFeCo, FeCo, CoFeB, CoZrMo, CoZrNb, CoZr, CoZrTa, CoHf, CoTa, CoTaHf, CoNbHf, CoHfPd, CoTaZrNb and CoZrMoNi.
REFERENCES:
patent: 5739988 (1998-04-01), Gill
patent: 5955211 (1999-09-01), Maeda et al.
David A. Thompson et al., "Thin film magnetoresistors in memory, storage, and related applications", pp. 1039-1050, IEEE Transactions on Magnetics, vol. Mag-11, No. 4, Jul. 1975.
NEC Corporation
Snow Walter E.
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