Magnetoresistive effect element

Details Magnetoresistive effect element Magnetoresistive effect element

1997-06-25

1999-03-09

Ometz, David L.

Dynamic magnetic information storage or retrieval

Head

Hall effect

338 32R, 324252, G11B 539, H01L 4308, G01R 3309

Patent

active

058809112

ABSTRACT:
The magnetoresistive effect element in accordance with the invention has several aspects. For instance, the magnetoresistive effect element includes an artificial lattice multilayered structure composed of a thin magnetic layer and a non-magnetic layer at least once successively deposited, and a bias field applying device for applying a bias magnetic field to the artificial lattice multilayered structure so that an orientation of residual magnetization of one of the thin magnetic layers having a greater coercive force than that of an adjacent thin magnetic layer, is the same as an orientation of a bias magnetic field to be applied to the artificial lattice multilayered structure. The magnetoresistive effect element provides enhanced regenerated outputs and also improves the symmetry of regenerated waveforms.

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