Magnetoresistive effect device and magnetic random access...

Dynamic magnetic information storage or retrieval – Head – Magnetoresistive reproducing head

Reexamination Certificate

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Reexamination Certificate

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07848059

ABSTRACT:
A magnetoresistive effect element includes a magnetization fixed layer having substantially fixed magnetization direction. A magnetization variable layer has a variable magnetization direction, consists of a magnetic alloy that has a BCC structure and is expressed by Fe1-x-yCoxNiy(0≦x+y≦1, 0≦x≦1, 0≦y≦1), and contains at least one additive element of V, Cr, and Mn in a range of 0<a≦20 at % (a is a content). An intermediate layer is disposed between the magnetization fixed layer and the magnetization variable layer and consists of a nonmagnetic material. The magnetization direction of the magnetization variable layer is switched by a bidirectional current passing through the magnetization fixed layer, the intermediate layer, and the magnetization variable layer.

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Japanese Office Action with English translation dated Aug. 3, 2010 in Application No. 2007-249596, 11 pages.

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