Magnetoresistive device, magnetoresistive head and magnetic...

Details Magnetoresistive device, magnetoresistive head and magnetic... Magnetoresistive device, magnetoresistive head and magnetic...

2011-03-01

2011-03-01

Bernatz, Kevin M (Department: 1785)

Stock material or miscellaneous articles

Magnetic recording component or stock

Magnetic head

C428S812000, C428S815000, C428S816000, C360S324110, C360S324120

Reexamination Certificate

active

07897274

ABSTRACT:
A magnetoresistive device includes a magnetization pinned layer, a magnetization free layer, a nonmagnetic intermediate layer formed between the magnetization pinned layer and the magnetization free layer, and electrodes allowing a sense current to flow in a direction substantially perpendicular to the plane of the stack including the magnetization pinned layer, the nonmagnetic intermediate layer and the magnetization free layer. At least one of the magnetization pinned layer and the magnetization free layer is substantially formed of a binary or ternary alloy represented by the formula FeaCobNic(where a+b+c=100 at %, and a≦75 at %, b≦75 at %, and c≦63 at %), or formed of an alloy having a body-centered cubic crystal structure.

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