Active solid-state devices (e.g. – transistors – solid-state diode – Thin active physical layer which is – Heterojunction
Reexamination Certificate
2005-07-05
2005-07-05
Fourson, George (Department: 2823)
Active solid-state devices (e.g., transistors, solid-state diode
Thin active physical layer which is
Heterojunction
Reexamination Certificate
active
06914257
ABSTRACT:
In accordance with a method of producing an MR (MagnetoResistive) device including a ferromagnetic tunnel junction made up of a first ferromagnetic layer, an insulation layer formed on the first ferromagnetic layer and a second ferromagnetic layer formed on the insulation layer, a metal or a semiconductor is deposited on the first ferromagnetic layer. The metal or the semiconductor is then caused to react to oxygen of a ground level to become an oxide layer, which is the oxide of the metal or that of the semiconductor. Subsequently, the oxide layer is caused to react to oxygen of an excitation level to form the insulation layer. The second ferromagnetic layer is formed on the insulation layer.
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Fukumoto Yoshiyuki
Kamijo Atsushi
Mitsuzuka Tsutomu
Shimura Ken-ichi
Tsuge Hisanao
Fourson George
Kebede Brook
NEC Corporation
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