Dynamic magnetic information storage or retrieval – Head – Magnetoresistive reproducing head
Reexamination Certificate
2005-01-11
2005-01-11
Ometz, David (Department: 2653)
Dynamic magnetic information storage or retrieval
Head
Magnetoresistive reproducing head
Reexamination Certificate
active
06842314
ABSTRACT:
A reproducing head of a thin-film magnetic head incorporates an MR element, a pair of bias field applying layers located to be adjacent to side portions of the MR element, and a pair of electrode layers that are located on the bias field applying layers and overlap the MR element. The electrode layers each have a first layer, a second layer, and a third layer. The first layer is laid over part of the top surface of the MR element via a protection layer, the second layer overlaps the first layer, and the third layer is located on the second layer. The second layer is thinner than the third layer. In the method of manufacturing the reproducing head, after the protection layer is formed on an element-to-be film to make the MR element, a first electrode-to-be film to make the first layers is formed continuously without interposing a step of exposing the protection layer to the air.
REFERENCES:
patent: 6493194 (2002-12-01), Sakaguchi et al.
patent: 20020093773 (2002-07-01), Pinarbasi
patent: 20020191353 (2002-12-01), Sato
patent: 20030011943 (2003-01-01), Webb et al.
patent: 20030189798 (2003-10-01), Lin et al.
patent: A 11-224411 (1999-08-01), None
patent: A 2000-76629 (2000-03-01), None
U.S. patent application Ser. No. 10/146,924, Sasaki et al., filed May 17, 2002.
Kamigama Takehiro
Sasaki Yoshitaka
Blouin Mark
Headway Technologies, Incorporated
Ometz David
SAE Magnetics (H.K.) Limited
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