Semiconductor device manufacturing: process – Having magnetic or ferroelectric component
Reexamination Certificate
2005-05-03
2005-05-03
Nguyen, Tuan H. (Department: 2813)
Semiconductor device manufacturing: process
Having magnetic or ferroelectric component
C438S381000
Reexamination Certificate
active
06887717
ABSTRACT:
A magnetoresistive device including a high-resistivity layer (13), a first magnetic layer (12) and a second magnetic layer (14), the first magnetic layer (12) and the second magnetic layer (14) being arranged so as to sandwich the high-resistivity layer (13), wherein the high-resistivity layer (13) is a barrier for passing tunneling electrons between the first magnetic layer (12) and the second magnetic layer (14), and contains at least one element LONCselected from oxygen, nitrogen and carbon; at least one layer A selected from the first magnetic layer (12) and the second magnetic layer (14) contains at least one metal element M selected from Fe, Ni and Co, and an element RCPdifferent from the metal element M; and the element RCPcombines with the element LONCmore easily in terms of energy than the metal element M. Accordingly, a novel magnetoresistive device having a low junction resistance and a high MR can be obtained.
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Adachi Hideaki
Hiramoto Masayoshi
Matsukawa Nozomu
Odagawa Akihiro
Sakakima Hiroshi
Matsushita Electric - Industrial Co., Ltd.
Merchant & Gould P.C.
Nguyen Tuan H.
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