Dynamic magnetic information storage or retrieval – Head – Magnetoresistive reproducing head
Reexamination Certificate
2005-04-12
2005-04-12
Castro, Angel A (Department: 2653)
Dynamic magnetic information storage or retrieval
Head
Magnetoresistive reproducing head
Reexamination Certificate
active
06879473
ABSTRACT:
There are provided a magnetoresistive effect element having a satisfactory magnetic characteristic and a magnetic memory device including this magnetoresistive effect element to produce excellent write/read characteristics.A magnetoresistive effect element1has a pair of ferromagnetic layers (magnetization fixed layer5and magnetization free layer7) opposed to each other through an intermediate layer6to produce a magnetoresistive change by a current flowing to the direction perpendicular to the film plane, the magnetization free layer having a normalized resistance ranging from 2000 Ωnm2to 10000 Ωnm2where a product of a specific resistance obtained when a current flows to the film thickness direction of the magnetization free layer7and a film thickness is defined as the normalized resistance. A magnetic memory device includes this magnetoresistive effect element1and bit lines and word lines sandwiching the magnetoresistive effect element1.
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Bessho Kazuhiro
Higo Yutaka
Hosomi Masanori
Kano Hiroshi
Mizuguchi Tetsuya
Castro Angel A
Sonnenschein Nath & Rosenthal LLP
Sony Corporation
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