Magnetoresistive device and barrier formation process

Details Magnetoresistive device and barrier formation process Magnetoresistive device and barrier formation process

1993-12-29

1996-04-09

Nguyen, Nam

Chemistry: electrical and wave energy

Processes and products

Vacuum arc discharge coating

2041922, 2281805, 216 22, 216 41, 427131, C23C 1434, B23K 3102

Patent

active

055058345

ABSTRACT:
A magnetoresistive (MR) device and barrier formation process is disclosed in which a barrier layer of an aluminum-titanium oxidic compound of approximately 35 .ANG. thickness is formed between a first alumina film and an overlying material of iron bearing content, such as nickel-iron. The aluminum-titanium oxidic compound layer serves as an etchant barrier for the alumina film in a subsequent etching process to reduce or eliminate "rosette" formation otherwise occurring when etchant is trapped within pores of a porous substrate such as ferrite, ceramic or other polycrystalline material. The barrier layer also serves as a passivation layer to prevent the surface of the underlying alumina film from being modified by the transfer of ultrasonic energy during subsequent wirebonding processing which would otherwise result in film delamination at the nickel-iron/alumina layer interface.

REFERENCES:
patent: 3656229 (1972-04-01), Sakurai et al.
patent: 4914538 (1990-04-01), Howard et al.
patent: 4931892 (1990-05-01), Spada
patent: 5059278 (1991-10-01), Cohen et al.
patent: 5262914 (1993-11-01), Chen et al.
patent: 5326429 (1994-07-01), Cohen et al.

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