Magnetoresistance thin film element formed through use of a resi

Details Magnetoresistance thin film element formed through use of a resi Magnetoresistance thin film element formed through use of a resi

1996-12-02

1998-02-24

Young, Christopher G.

Radiation imagery chemistry: process, composition, or product th

Imaged product

Structurally defined

430 17, 430166, 430191, G03F 7023, G03F 711

Patent

active

057210780

ABSTRACT:
A resist pattern formed on a substrate has a T-shaped cross section including a stem portion extending from the substrate surface and a cap portion connected to the stem portion and spaced from the substrate surface. Provided that .alpha. is a minimum of the angle which is defined between a tangent at the lower edge of the cap portion and the substrate surface, and h is the spacing between the lower edge of the cap portion and the substrate surface at an intermediate position, .alpha. and h fall within a range defined and encompassed by tetragon ABCD wherein A: .alpha.=0.degree., h=0.01 .mu.m, B: .alpha.=20.degree., h=0.01 .mu.m, C: .alpha.=20.degree., h=0.2 .mu.m, and D: .alpha.=0.degree., h=0.3 .mu.m. In a patterning process including the steps of coating of a resist composition to form a resist coating, exposure, reversal baking and development, at least one condition is changed by reducing the thickness of the resist coating, reducing an exposure dose, lowering a reversal baking temperature, reducing a reversal baking time, increasing a developer temperature or extending a developing time such that a resist pattern of T-shaped cross section may be formed.

REFERENCES:
IEEE Transactions of Magnetics, vol. 32, No. 1, pp. 25-30, Jan. 1996, Banbock et al, "MR Head Wafer Fabrication Technology: Current & Future Perspectives".

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