Magnetoresistance sensor magnetically coupled with high-coercive

Dynamic magnetic information storage or retrieval – Head – Hall effect

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G11B 539

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053294130

ABSTRACT:
A magnetoresistance sensor of this invention is designed to detect a magnetic field on the basis of a change in electric resistance of a magnetoresistance layer, and includes a substrate, the magnetoresistance layer, a magnetization stabilizing layer for stabilizing magnetization of the magnetoresistance layer, and an electrical conductive layer formed on the magnetoresistance layer or the magnetization stabilizing layer. The sensor is characterized in that the magnetoresistance layer and the magnetization stabilizing layer are stacked on each other such that the layers are magnetically coupled to each other at their two end regions with an exchange coupling force higher than that at the remaining region. With this arrangement, there is provided a magnetoresistance sensor having high sensitivity, which can apply a desired bias magnetic field to the MR layer while preventing the bias magnetic field from being disturbed by a magnetic field from a magnetic recording medium or the like.

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