Magnetoresistance film and method of manufacturing same

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428213, 428611, 428635, 428694TM, 428692, 428900, 428928, 360113, G11B 5127

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active

054477816

ABSTRACT:
A magnetoresistance film has an artificial lattice film structure having alternating conductive and magnetic layers. The anisotropic magnetic field H.sub.k of the magnetic layers and the anti-ferromagnetic coupling magnetic field H.sub.s between the magnetic layers which face each other through the conductive layers satisfy the relationship H.sub.k <H.sub.s. The conductive layers contain 0.05 to 5 atomic % of at least one material selected from the group consisting of iron, cobalt, and nickel. The thickness d of each conductive layer is selected in the range of 1.02.times.d.sub.max .ltoreq.d.ltoreq.1.10.times.d.sub.max or 0.90.times.d.sub.max .ltoreq.d.ltoreq.0.98.times.d.sub.max. The magnetoresistance is exhibited substantially isotropically in the plane of the layers. The magnetoresistance film has large magnetoresistance prevented from being reduced due to the anisotropy of the magnetic layers, a high sensitivity, and keeps its large magnetoresistance stably. A method of manufacturing such a magnetoresistance film is also disclosed.

REFERENCES:
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patent: 5151137 (1992-09-01), Yoshizawa et al.
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13th International Coll. on Magnetic Films and Surfaces; 26-30 Aug. 1991 Glasgow United Kingdom: "Giant Magnetoresistance and Oscillatory Interlayer Exchange Coupling in Cu Based Multilayers Grown by Sputtering and MBE"; pp. 231-232.
Patent Abstract of Japan, vol. 14, No. 168 (E-912) 30 Mar. 1990 & JP-A-02 023 681, Titled: Magnetoresistance Effect Element.

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