Magnetoresistance element, magnetoresistive head and magnetoresi

Details Magnetoresistance element, magnetoresistive head and magnetoresi Magnetoresistance element, magnetoresistive head and magnetoresi

1996-12-18

1998-02-03

Heinz, A. J.

Dynamic magnetic information storage or retrieval

Head

Hall effect

365158, 365173, 428213, 428694T, 428694TM, G11B 539, G11C 1115, B32B 702

Patent

active

057151210

ABSTRACT:
A magnetoresistance element has a structure of a magnetic film 3, a nonmagnetic film 2 and a magnetic film 1 layered successively, and the nonmagnetic film is made of a mixture of electrical conductors and insulators. Then, magnetic coupling between the magnetic films 1 and 3 is reduced. Further, because it is possible to detect a magnetic field by supplying a current along a film plane, a large change in magnetoresistance is observed, or the sensitivity is high. Modified magnetoresistance elements are also described including a film 4 suppressing magnetization reversal or an interface magnetic film 5. A magnetic head for a hard disk is produced by adding a yoke to the magnetoresistance element. A memory device having a plurality of magnetoresistance elements is produced by adding word lines and the like thereto.

REFERENCES:
patent: 5390061 (1995-02-01), Nakatani et al.
patent: 5432734 (1995-07-01), Kawano et al.
patent: 5463516 (1995-10-01), Valet et al.
patent: 5510172 (1996-04-01), Araki et al.
patent: 5514452 (1996-05-01), Araki et al.
Journal of Magnetism and Magnetic Materials, "1 Mb Memory Chip Using Giant Magnetoresistive Memory Cells, " vol. 126, No. 1-03, pp. 524-526, Sep. 1, 1993.
Journal of Magnetism and Magnetic Materials, "Dependence of Magnetoresistanc on Temperature and Applied Voltage in a 82Ni-Fe/Al-Al.sub.2 O.sub.3 /Co Tunneling Junction," vol. 126, No. 1-03, pp. 430-432, Sep. 1, 1993.

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