Magnetoresistance effect type thin film head

Details Magnetoresistance effect type thin film head Magnetoresistance effect type thin film head

1994-08-24

1995-06-13

Wolff, John H.

Dynamic magnetic information storage or retrieval

Head

Hall effect

G11B 539

Patent

active

054248906

ABSTRACT:
A magnetoresistance effect type thin film head (A) constructed in a manner that a magnetoresistance effect element, that is, an MR element (1) is disposed perpendicularly to a head surface a, and among two electrodes (2a) and (2b) led out from both ends of the MR element (1), the one electrode (2a) is exposed to the head surface a but the other electrode (2b) is not exposed to the head surface a, wherein the one electrode (2a) exposed to the head surface a is connected to a ground voltage Vss, thereby decreasing the change in voltage difference between the electrode (2a) of the MR element (1) and a disc surface b to prevent the electrical breakdown of the thin film head (A).

REFERENCES:
patent: 4068272 (1978-01-01), Kanai et al.
patent: 4142218 (1979-02-01), Gorter
IEEE Transactions on Magnetics, vol. 24, No. 6, Nof. 1989 H. Suyama et al "Thin Film MR Head for high density rigid disk drive", pp. 2612-2614, especially FIG. 1.

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