Magnetoresistance effect film and production process thereof

Details Magnetoresistance effect film and production process thereof Magnetoresistance effect film and production process thereof

1995-08-31

1999-02-16

Gellner, Michael L.

Electrical resistors

Resistance value responsive to a condition

Magnetic field or compass

360126, H01L 4300

Patent

active

058725024

ABSTRACT:
A magnetoresistance effect film is disclosed. This magnetoresistance effect film comprises a substrate, at least two ferromagnetic thin films stacked one over the other on the substrate with a non-magnetic thin film interposed therebetween, and an antiferromagnetic thin film arranged adjacent to one of the ferromagnetic thin films. The antiferromagnetic thin film is a superlattice formed of at least two oxide antiferromagnetic materials selected from NiO, Ni.sub.x Co.sub.1-x O (0.1.ltoreq.x.ltoreq.0.9) and C.sub.o O. A biasing magnetic field Hr applied to the one ferromagnetic thin film located adjacent the antiferromagnetic thin film is greater than coercive magnetic force Hc2 of the other ferromagnetic thin film.

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