Magnetoresistance effect film and method for making the same

Details Magnetoresistance effect film and method for making the same Magnetoresistance effect film and method for making the same

1997-12-23

2000-04-18

Kiliman, Leszek

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Physical dimension specified

428336, 428692, 428694R, 428694T, 428694TS, 428694TM, 428900, 360113, 324252, G11B 566

Patent

active

060513098

ABSTRACT:
Disclosed are magnetoresistance effect films which have a magnetic thin film and an anti-ferromagnetically coupled magnetic multilayer thin film inserted into the interface between the non-magnetic thin film and the magnetic thin film, and a method for forming magnetoresistance effect films including the step of thermally treating the anti-ferromagnetic thin film and the magnetic multilayer thin film at a temperature of 200 to 300.degree. C. so as to generate one-directional anisotropy in the magnetic multilayer thin film, or the step of rotating by 90.degree. a magnetic field applied during the film formation so that the weak magnetization axes of the magnetic thin film and the magnetic multilayer thin film are orthogonal to each other.

REFERENCES:
patent: 5549978 (1996-08-01), Iwasaki
"Thin Film Magnetoresistors in Memory, Storage, and Related Applications" Thompson et al IEEE Transactions on Magnetics, vol. MAG-11, No. 4; Jul. 1975; pp. 1039-1050.

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