Magnetoresistance effect film, a method of manufacturing the sam

Details Magnetoresistance effect film, a method of manufacturing the sam Magnetoresistance effect film, a method of manufacturing the sam

1998-03-20

1999-11-23

Kiliman, Leszek

Stock material or miscellaneous articles

Structurally defined web or sheet

Including components having same physical characteristic in...

428692, 428694R, 428694T, 428694TR, 428694TS, 428694TM, 428336, 428900, 360113, 338 32R, 324252, G11B 566

Patent

active

059896906

ABSTRACT:
Magnetic thin films 2 and 3 are stacked on a substrate 4 with a nonmagnetic thin film 1 interposed therebetween. An antiferromagnetic thin film 5 is arranged adjacent to one magnetic thin film 3. The inequality Hc.sub.2 <Hr is satisfied between a bias magnetic field Hr of the antiferromagnetic thin film 5 and coercive force Hc.sub.2 of the other magnetic thin film 2. At least a part of the antiferromagnetic thin film 5 comprises NiMn of an fct structure. Alternatively, the antiferromagnetic thin film 5 comprises a two-layer structure composed of a CoO layer deposited on a NiO layer to a thickness between 10 and 40 angstroms.

REFERENCES:
patent: 5549978 (1996-08-01), Iwasaki

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