Magnetoresistance effect element with improved antiferromagnetic

Details Magnetoresistance effect element with improved antiferromagnetic Magnetoresistance effect element with improved antiferromagnetic

1994-03-02

1996-09-03

Levy, Stuart S.

Dynamic magnetic information storage or retrieval

Head

Hall effect

324252, 338 32R, G11B 539

Patent

active

055529496

ABSTRACT:
An exchange coupled film is presented, which has an antiferromagnetic film being made of N.sub.100-z Mn.sub.z (where N is at least one selected from the group consisting of Cu, Ru, Rh, Re, Pd, Pt, Ag, Au, Os, and Ir; and 24.ltoreq.z.ltoreq.75) and having a tetragonal crystalline structure or being made of Cr.sub.100-x M.sub.x (where M is at least one selected from the group consisting of elements of group 3b of periodic table, Cu, Ru, Rh, Re, Pt, Pd, Ag, Au, Os, Ir, Mn, Fe, Co, and V; and x is in the range of 0<x<30) and a ferromagnetic film at least part of which is laminated with the antiferromagnetic film. With such an antiferromagnetic film, an exchange coupled film with a good exchange coupling characteristic and high corrosive resistance can be obtained.

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Alberts et al, A Magnetoelastic Study of Cr--Fe alloys, Apr./1992, Journal of Physics: Condens. Matter, pp. 3835-3846.

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