Magnetoresistance effect element, method of manufacture...

Details Magnetoresistance effect element, method of manufacture... Magnetoresistance effect element, method of manufacture...

2007-03-20

2007-03-20

Ho, Tu-Tu (Department: 2818)

Active solid-state devices (e.g., transistors, solid-state diode

Responsive to non-electrical signal

Magnetic field

C257S295000, C257SE27006, C365S158000

Reexamination Certificate

active

10933418

ABSTRACT:
The present invention is aimed at enabling a spin-transfer magnetization switching in the random access magnetic memory by reducing a switching current density in the spin-transfer magnetization switching to an order smaller than 10 MA/cm2and without causing breakdowns neither in the memory element which uses a TMR film nor in the element selection FET. The memory layer in the magnetoresistance effect element comprises a magnetic film having a value of saturation magnetization in a range from 400 kA/m to 800 kA/m. The memory layer comprises a magnetic film which contains one or more magnetic elements selected from the group of, for example, cobalt, iron and nickel, and which further contains a non-magnetic element. The non-magnetic element is contained at a ratio of, for example, 5 at % or more and less than 50 at %. A memory layer12in the memory cell has a dimension less than 200 nmφ.

REFERENCES:
patent: 5343422 (1994-08-01), Kung et al.
patent: 5876807 (1999-03-01), Muto
patent: 6063512 (2000-05-01), Osaka et al.
patent: 6917088 (2005-07-01), Takahashi et al.
patent: 2004/0038082 (2004-02-01), Tsumori
patent: 2005/0047283 (2005-03-01), Ruigrok
patent: 2002-246566 (2002-08-01), None
patent: 2003-048614 (2003-02-01), None

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