Magnetoresistance effect element having improved biasing films,

Details Magnetoresistance effect element having improved biasing films, Magnetoresistance effect element having improved biasing films,

1998-05-04

2000-08-29

Evans, Jefferson

Dynamic magnetic information storage or retrieval

Head

Hall effect

G11B 539

Patent

active

061117226

ABSTRACT:
A spin valve GMR element comprises a pair of magnetic biasing films disposed with a predetermined gap and a spin valve GMR film disposed in such a manner that at least both edge portions thereof are stacked on the pair of magnetic biasing films. The spin valve GMR film has a free layer containing a magnetic layer large in its saturation magnetization such as a Co containing magnetic layer. The magnetic biasing film has a laminate film composed of a high saturation magnetization magnetic layer and a magnetic hard layer. The high saturation magnetization layer, for a saturation magnetization Ms.sup.free of a free layer and a saturation magnetization of Ms.sup.hard of a magnetic hard layer, has a saturation magnetization Ms.sup.high satisfying at least one of Ms.sup.high .gtoreq.Ms.sup.free and Ms.sup.high .gtoreq.Ms.sup.hard. According to such a bias structure, when a spin valve GMR element of an over laid structure is narrowed in its track, Barkhausen noise can be effectively suppressed from occurring.

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