Magnetoresistance effect element having a nonmagnetic...

Dynamic magnetic information storage or retrieval – Head – Magnetoresistive reproducing head

Reexamination Certificate

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

Reexamination Certificate

active

07130164

ABSTRACT:
A magnetoresistance effect element comprises a magnetoresistance effect film including a magnetically pinned layer whose direction of magnetization is pinned substantially in one direction, a magnetically free layer whose direction of magnetization changes in response to an external magnetic field, and a nonmagnetic intermediate layer located between the pinned layer and the free layer; and a pair of electrodes electrically connected to said magnetoresistance effect film to supply a sense current perpendicularly to a film plane of said magnetoresistance effect film. The intermediate layer has a first layer including a first region whose resistance is relatively high and second regions whose resistance is relatively low. The sense current preferentially flows through the second regions when the current passes the first layer. Alternatively, the concentration of oxygen in the first layer may have a two-dimensional fluctuation, and a first region where the concentration of oxygen is equal to or higher than 40 atomic % and a second region where the concentration of oxygen is equal to or lower than 35 atomic % may be provided in the first layer.

REFERENCES:
patent: 5715121 (1998-02-01), Sakakima et al.
patent: 5901018 (1999-05-01), Fontana et al.
patent: 5949622 (1999-09-01), Kamiguchi et al.
patent: 5966322 (1999-10-01), Pohm et al.
patent: 6111729 (2000-08-01), Kamiguchi et al.
patent: 6348274 (2002-02-01), Kamiguchi et al.
patent: 6538861 (2003-03-01), Hayashi et al.
patent: 6560077 (2003-05-01), Fujiwara et al.
patent: 6574079 (2003-06-01), Sun et al.
patent: 6590750 (2003-07-01), Abraham et al.
patent: 6759084 (2004-07-01), Ju et al.
patent: 6784509 (2004-08-01), Yuasa et al.
patent: 2002/0039091 (2002-04-01), Saishu et al.
patent: 2002/0051330 (2002-05-01), Heijden et al.
patent: 2003/0011463 (2003-01-01), Iwasaki et al.
patent: 2003/0011945 (2003-01-01), Yuasa et al.
patent: 2004/0201929 (2004-10-01), Hashimoto et al.
patent: 2005/0135018 (2005-06-01), Koui, et al.
patent: 9-172212 (1997-06-01), None
patent: 2001-250208 (2001-09-01), None
patent: 2003-204094 (2003-07-01), None
U.S. Appl. No. 11/061,635, filed Feb. 22, 2005, Koui et al.
U.S. Appl. No. 11/061,513, filed Feb. 22, 2005, Koui et al.
U.S. Appl. No. 11/045,326, filed Jan. 31, 2005, Koui et al.
U.S. Appl. No. 11/399,449, filed Apr. 7, 2006, inventor Koui, et al.

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Magnetoresistance effect element having a nonmagnetic... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Magnetoresistance effect element having a nonmagnetic..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Magnetoresistance effect element having a nonmagnetic... will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-3717835

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.