Dynamic magnetic information storage or retrieval – Head – Hall effect
Patent
1994-03-14
1996-02-20
Wolff, John H.
Dynamic magnetic information storage or retrieval
Head
Hall effect
338 32R, 32420721, G11B 539, H01L 4308, G01R 3309
Patent
active
054934656
ABSTRACT:
A magnetoresistance effect element has a pair of ferromagnetic layers with a middle non-magnetic metallic layer interposed therebetween. The middle non-magnetic metallic layer has lamination structure of non-magnetic metallic thin films formed of at least two kinds of non-magnetic metallic materials. In the lamination structure of the non-magnetic metallic thin film, Fermi energies of the non-magnetic metallic thin films disposed on interface sides of the ferromagnetic layers has a value closer to a Fermi energy in a direction of spin whose electron spin dependent mean free path is long among Fermi energies of the ferromagnetic layers. A non-magnetic metallic thin film is disposed between such two non-magnetic metallic thin films. Difference in Fermi energy between non-magnetic metallic thin films made of two kinds of non-magnetic metallic materials is 0.5 eV or more. By the use of such a middle non-magnetic metallic layer, while the thickness thereof is as thin as possible, exchange coupling between ferromagnetic layers can be small. Thus, resistance change sensitivity can be enhanced.
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Hashimoto Susumu
Iwasaki Hitoshi
Kamiguchi Yuzo
Sahashi Masashi
Sawabe Atsuhito
Kabushiki Kaisha Toshiba
Letscher George J.
Wolff John H.
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