Dynamic magnetic information storage or retrieval – Head – Magnetoresistive reproducing head
Reexamination Certificate
2007-01-23
2007-01-23
Evans, Jefferson (Department: 2627)
Dynamic magnetic information storage or retrieval
Head
Magnetoresistive reproducing head
Reexamination Certificate
active
10882364
ABSTRACT:
A magnetoresistance effect has a lamination structure comprising a free layer including at least two ferromagnetic layers, a pinned layer including two ferromagnetic layers; and at least one nano-contact portion composed of a single ferromagnetic layer and disposed between the free layer and the pinned layer. A distance between the free layer and the pinned layer, i.e., thickness of the nano-contact portion in the lamination direction, is not more than Fermi length, preferably less than 100 nm.
REFERENCES:
patent: 5715121 (1998-02-01), Sakakima et al.
patent: 5936402 (1999-08-01), Schep et al.
patent: 6046891 (2000-04-01), Yoda et al.
patent: 6052262 (2000-04-01), Kamiguchi et al.
patent: 6077618 (2000-06-01), Sakakima et al.
patent: 6452764 (2002-09-01), Abraham et al.
patent: 6590750 (2003-07-01), Abraham et al.
patent: 6731475 (2004-05-01), Ikeda
patent: 6751072 (2004-06-01), Freitag et al.
patent: 6804090 (2004-10-01), Kokado
patent: 6933042 (2005-08-01), Gill
patent: 6943040 (2005-09-01), Min et al.
patent: 6954342 (2005-10-01), Kula et al.
patent: 2003/0104249 (2003-06-01), Okuno et al.
patent: 2004/0201929 (2004-10-01), Hashimoto et al.
patent: 2005/0068685 (2005-03-01), Gill
patent: 2005/0099724 (2005-05-01), Nakamura et al.
patent: 2005/0136600 (2005-06-01), Huai
patent: 2005/0180202 (2005-08-01), Huai et al.
patent: 11-510911 (1999-09-01), None
patent: 2003-204095 (2003-07-01), None
N. Garcia, et al., Magnetoresistance in Excess Of 200% In Ballistic Ni Nanocontacts At Room Temperature And 100 Oe, Physical Review Letters, Apr. 5, 1999, 2923-2926, vol. 82, No. 14, © 1999 The American Physical Society.
N. Garcia, et al., Ballistic Magnetoresistance in Nanocontacts Electrochemically Grown Between Macro- and Microscopic Ferromagnetic Electrodes, Applied Physics Letters, Mar. 11, 2002, 1785-1787, vol. 80, No. 10, © American Institute of Physics.
Sato Isamu
Sbiaa Rachid
Evans Jefferson
Kenyon & Kenyon LLP
TDK Corporation
LandOfFree
Magnetoresistance effect element and magnetic head with... does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Magnetoresistance effect element and magnetic head with..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Magnetoresistance effect element and magnetic head with... will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-3767030