Magnetoresistance effect element and magnetic field detection de

Details Magnetoresistance effect element and magnetic field detection de Magnetoresistance effect element and magnetic field detection de

1996-08-01

1998-10-27

Ometz, David L.

Dynamic magnetic information storage or retrieval

Head

Hall effect

324252, 338 32R, 428692, 428900, G11B 539, H01L 4300

Patent

active

058285261

ABSTRACT:
A magnetoresistance effect element is provided with a magnetoresistance effect film (MR film) formed of alternative laminations of magnetic layers (for example, soft magnetic layers such as Fe--Ni--Co alloy layers) which are coupled anti-ferromagnetically with each other between adjacent magnetic layers and non-magnetic layers (for example, non-magnetic layers such as Cu layers) and provided with a bias soft magnetic layer (for example, SAL layer) for application of a bias magnetic filed to the magnetoresistance effect film, where the anisotropic magnetic field (Hk) in the plane of the bias medium layer is 5 Oe.ltoreq.Hk.ltoreq.15 Oe.

REFERENCES:
patent: 5341118 (1994-08-01), Parkin et al.
patent: 5341261 (1994-08-01), Dieny et al.
patent: 5465185 (1995-11-01), Heim et al.
patent: 5549978 (1996-08-01), Iwasaki et al.
patent: 5585986 (1996-12-01), Parkin
IEEE Trans. on Mag. "Study of SAL-biased MR Heads . . . " vol. 30, No. 6, Nov. 1994, Guo et al.

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