Magnetoresistance effect element

Details Magnetoresistance effect element Magnetoresistance effect element

1994-02-03

1995-07-11

Wolff, John H.

Dynamic magnetic information storage or retrieval

Head

Hall effect

G11B 5127

Patent

active

054326613

ABSTRACT:
A magnetoresistance effect element is provided which comprises a substrate on which a first magnetic layer having a thickness of 0.2 to 5 nm which contains cobalt, a second magnetic layer having a thickness of not larger than 5 nm which contains iron or nickel or an alloy thereof, a third magnetic layer having a thickness of 0.2 to 5 nm which contains cobalt and a nonmagnetic layer having a thickness of 0.5 to 5 nm are laminated in this order at least twice, wherein the thickness of the second magnetic layer is not larger than half of the total thickness of the first and third magnetic layers. The element is useful as a magnetoresistance sensor or head.

REFERENCES:
patent: 4103315 (1978-07-01), Hempstead et al.
patent: 5287238 (1994-02-01), Baumgart et al.
patent: 5341261 (1994-08-01), Dieny et al.

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