Magnetoresistance effect element

Details Magnetoresistance effect element Magnetoresistance effect element

1994-10-17

1996-03-19

Lateef, Marvin M.

Electrical resistors

Resistance value responsive to a condition

Magnetic field or compass

324252, H01L 4300

Patent

active

055006337

ABSTRACT:
A magnetoresistance effect element includes a multilayer stack of alternating magnetic and nonmagnetic layers, and having a mixture layer constituted by a mixture of a ferromagnetic element and a non-ferromagnetic element interposed between adjacent stacked magnetic and non-magnetic layers so as to exhibit a magnetoresistance effect. The multilayered stack includes at least two magnetic layers, at least two mixture layers, and at least one non-magnetic layer. 2(X.sub.1 /X.sub.n)
is larger than 1.1 where n is the number of atomic layers of the mixture layer, X.sub.1 is an atomic concentration (%) of the ferromagnetic element of an atomic layer closest to the magnetic layer, and X.sub.n is an atomic concentration (%) of the ferromagnetic element of the n-th atomic layer closest to the non-magnetic layer.

REFERENCES:
patent: 4949039 (1990-08-01), Grunberg
patent: 5168760 (1992-12-01), Wun-Fogle et al.
patent: 5206590 (1993-04-01), Dieny et al.
patent: 5243316 (1993-09-01), Sakakima et al.
patent: 5373238 (1994-12-01), McGuire et al.
patent: 5381125 (1995-01-01), Chen et al.

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