Magnetoresistance effect element

Details Magnetoresistance effect element Magnetoresistance effect element

1995-01-17

1996-05-07

Kilman, Leszek

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Physical dimension specified

428336, 428611, 428666, 428667, 428692, 428694R, 428694T, 428694TS, 428694TM, 428900, G11B 566, B32B 516, B32B 1500

Patent

active

055144691

ABSTRACT:
A magnetoresistance effect element having a substrate, a buffer layer of a metal selected from the group consisting of chromium, tungsten, titanium, vanadium, manganese and their alloys which is formed on the substrate, and at least two magnetic thin layers which are laminated with interposing a non-magnetic thin layer therebetween on the metal thin layer, wherein adjacent magnetic thin layers through the non-magnetic thin layer have different coercive forces. This magnetoresistance effect element has an increased magnetoresistance ratio.

REFERENCES:
patent: 4663685 (1987-05-01), Tsang
patent: 5001586 (1991-03-01), Aboaf et al
Satoru et al., Patent Abstracts of Japan, vol. 16, No. 236 (E-1210) May 1992.

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