Magnetoresistance effect element

Details Magnetoresistance effect element Magnetoresistance effect element

1993-08-02

1994-11-15

Lateef, Marvin M.

Electrical resistors

Resistance value responsive to a condition

Magnetic field or compass

324252, H01L 4300

Patent

active

053652126

ABSTRACT:
A magnetoresistance effect element includes a multilayer in which magnetic layers, mixture layers each constituted by a mixture of a ferromagnetic element and a non-ferromagnetic element, and nonmagnetic layers are stacked on each other so as to exhibit a magnetoresistance effect. In this element, each of the mixture layers is interposed between the magnetic layer and the nonmagnetic layer, and 2 (X.sub.1 /X.sub.n)
is larger than 1.1 where n is the number of atomic layers of the mixture layer, X.sub.1 is the atomic concentration (%) of the ferromagnetic element of an atomic layer closest to the magnetic layer, and X.sub.n is the atomic concentration (%) of the ferromagnetic element of an n-th atomic layer closest to the nonmagnetic layer.

REFERENCES:
patent: 4949039 (1990-08-01), Grunberg
patent: 5168760 (1992-12-01), Wun-Fogle et al.
patent: 5206590 (1993-04-01), Dieny et al.
patent: 5243316 (1993-09-01), Sakakima et al.
Physical Review B, vol. 43, No. 16, Jun. 1, 1991, The American Physical Society, pp. 13 228-13 231, K. Le Dang, et al., "NMR and Magnetization Studies of Co/Cu Superlattices".
Physical Review B, vol. 44, No. 16, Oct. 15, 1991, The American Physical Society, pp. 9100-9103, H. A. M. Gronckel, et al., "Nanostructure of Co/Cu Multilayers".

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