Magnetoresistance effect element

Stock material or miscellaneous articles – All metal or with adjacent metals – Having magnetic properties – or preformed fiber orientation...

Patent

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

428622, 428627, 428629, 428632, 428639, 428641, 428660, 428667, 428670, 428678, 428692, 428900, 428928, 360113, 324252, G11B 5127

Patent

active

057259631

ABSTRACT:
It is an object of the present invention to provide a magnetoresistance effect element which has a film with a spin valve structure or an artificial lattice film having good soft magnetic characteristics, and which can be applied to a high-sensitivity magnetic head. The present invention provides a magnetoresistance effect element including a stacked film formed on a substrate by sequentially stacking a ferromagnetic film containing as its main constituents at least one elements selected from the group consisting of Co, Fe, and Ni, a nonmagnetic film, and the ferromagnetic film, wherein the two ferromagnetic films are not coupled with each other, and the closest packed plane of each ferromagnetic film is oriented in a direction perpendicular to the film surface.

REFERENCES:
patent: 4663685 (1987-05-01), Tsang
patent: 4835069 (1989-05-01), Sawada et al.
patent: 5001586 (1991-03-01), Aboaf et al.
patent: 5057380 (1991-10-01), Hayashi et al.
patent: 5068147 (1991-11-01), Hori et al.
patent: 5159513 (1992-10-01), Dieny et al.
patent: 5236791 (1993-08-01), Yahisa et al.
patent: 5301079 (1994-04-01), Cain et al.
patent: 5304975 (1994-04-01), Saito et al.
patent: 5408377 (1995-04-01), Gurney et al.
patent: 5422571 (1995-06-01), Gurney et al.
patent: 5465185 (1995-11-01), Heim et al.
Physical Review B, vol. 45, No. 14, Apr. 1, 1992, pp. 7795-7804, W.F. Egelhoff, Jr., et al., "Antiferromagnetic Coupling In FE/CU/FE and CO/CU/CO Multilayers on CU(111)".

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Magnetoresistance effect element does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Magnetoresistance effect element, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Magnetoresistance effect element will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-137865

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.