Magnetoresistance effect device and method of production...

Etching a substrate: processes – Forming or treating article containing magnetically...

Reexamination Certificate

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C257SE43004, C257SE43006

Reexamination Certificate

active

07727409

ABSTRACT:
A method of production of a magnetoresistance effect device is able to prevent or minimize a drop in the MR ratio and maintain the high performance of the magnetoresistance effect device even if forming an oxide layer as a surface-most layer constituting a protective layer by the oxidation process inevitably included in the process of production of microprocessing by dry etching performed in a vacuum. Two mask layers used for microprocessing are doubly piled up. This method of production of a magnetoresistivity effect device including a magnetic multilayer film including at least two magnetic layers includes a step of providing under a first mask material that is a nonorganic material a second mask material able to react with other atoms to form a conductive substance, and a device made according to the method.

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English language version of Japanese Office Action dated Mar. 17, 2008.
Final Office Action in JP 2004-240838 dated Sep. 16, 2008, with English Translation thereof.
English-language translation of the Office Action issued in Japanese Patent Application No. 2008-290569.
An English language translation of an Office Action issued in corresponding Japanese Patent Application No. 2008-290569, mailed Sep. 29, 2009.

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