Magnetoresistance effect device and manufacturing method thereof

Details Magnetoresistance effect device and manufacturing method thereof Magnetoresistance effect device and manufacturing method thereof

1996-08-26

1998-07-07

Tso, Edward

Electrical resistors

Resistance value responsive to a condition

Magnetic field or compass

360113, 2960308, H01L 4300

Patent

active

057775427

ABSTRACT:
In a magnetoresistance effect device that has leads, a magnetic gap layer, and a magnetic shield layer that are laminated on a magnetoresistance effect film, an insulation film is formed on a main surface at the edge portions of the leads (namely, on a non-tapered surface). Thus, a film quality deteriorated region of the magnetic gap layer is spaced apart from an electric field concentrated portion. In addition, the insulation film has a mask layer on a conductor layer formed on the magnetoresistance effect film. When a pair of leads are formed by the ion-milling process, a magnetic gap layer is formed with the mask layer on the non-tapered surface of the leads. Thus, since an insulation film is formed at the edge portions of the leads, the lower corner portion of the magnetic gap layer becomes an edge portion of the insulation film. In this portion, the deterioration of the film quality is inevitable. However, the electric field concentrated portion is still the edge portions of the leads. Thus, since the film quality deteriorated portion is spaced apart from the electric field concentrated portion, the dielectric breakdown hardly takes place.

REFERENCES:
patent: 5371643 (1994-12-01), Yuito et al.
patent: 5432734 (1995-07-01), Kawano et al.
patent: 5442507 (1995-08-01), Koga et al.
patent: 5549978 (1996-08-01), Iwasaki et al.
patent: 5552949 (1996-09-01), Hashimoto et al.
patent: 5585199 (1996-12-01), Kamiguchi et al.

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