Active solid-state devices (e.g. – transistors – solid-state diode – Responsive to non-electrical signal – Magnetic field
Reexamination Certificate
2011-06-21
2011-06-21
Le, Thao X (Department: 2892)
Active solid-state devices (e.g., transistors, solid-state diode
Responsive to non-electrical signal
Magnetic field
C257SE43002, C257SE29323, C360S324100, C438S003000
Reexamination Certificate
active
07964924
ABSTRACT:
A magneto-resistance effect device (1) includes a semiconductor region (2) having a surface provided with a plurality of isolated metal micro-particles (3) of not more than 100 μm disposed at intervals of not more than 1 μm, a semiconductor or half-metal cap layer (4) for covering the semiconductor region and a plurality of electrodes (5) disposed on a surface of the cap layer and separated from each other. The device exhibits a high magneto-resistance effect at room temperature, is highly sensible to a magnetic field and can be produced through a simple manufacturing process. The device is formed of a magneto-resistant material easy to match a semiconductor fabrication process. A magnetic field sensor using the device (1) has various excellent characteristics.
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Akinaga Hiroyuki
Mizuguchi Masaki
Oshima Masaharu
Kraig William F
Le Thao X
National Institute of Advanced Industrial Science and Technology
Oblon, Spivak McClelland, Maier & Neustadt, L.L.P.
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