Magnetoresistance device

Stock material or miscellaneous articles – Composite – Of inorganic material

Reexamination Certificate

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Details

C428S692100, C360S324000, C360S324100, C360S324200

Reexamination Certificate

active

06960397

ABSTRACT:
Provided is a magnetoresistance device. The device includes a substrate, a lower layer formed on the substrate, and a magnetoresistance structure formed on the lower layer, and the lower layer is formed of amorphous ZrxAl1-x(0<x<1) or ZrxAl1-xOy(0<x<1, 0<y<1). In a tunneling magnetoresistance (TMR) device, a tunneling barrier layer is formed of at least one selected from the group consisting of ZrxAl1-xOy(0<x<1, 0<y<1), TixAl1-xOy(0<x<1, 0<y<1), and NbxAl1-xOy(0<x<1, 0<y<1).

REFERENCES:
patent: 6052263 (2000-04-01), Gill
patent: 6709767 (2004-03-01), Lin et al.
patent: 2004/0184199 (2004-09-01), Nakashio et al.
“Low-Resistance spin-dependant tunnel junctions with ZrAIOx barriers” Applied Physics Letters, vol. 79, No. 2, Dec. 31, 2001, pp. 4553-4555.

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