Single-crystal – oriented-crystal – and epitaxy growth processes; – Processes of growth from solid or gel state – Using heat
Patent
1995-08-17
1997-12-02
Kunemund, Robert
Single-crystal, oriented-crystal, and epitaxy growth processes;
Processes of growth from solid or gel state
Using heat
117 4, 117 10, 117957, C30B 106
Patent
active
056931387
ABSTRACT:
According to this invention, a magnetooptical element represented by (Cd.sub.1-X-Y Mn.sub.X Hg.sub.Y).sub.1 Te.sub.1 (0<X<1, 0<Y<1) comprises, so as to be used in a range around each of wavelength bands of 0.98 .mu.m, 1.017 .mu.m, 1.047 .mu.m, and 1.064 .mu.m, a single crystal having a composition contained in an area defined in a quasi ternary-element phase diagram of MnTe-HgTe-CdTe by four points a, b, c, and d of:
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patent: 5259900 (1993-11-01), Tregilgas et al.
Piotrowski, "Isothermal Growth of Homogeneous Hg.sub.1--x--y Cd.sub.x Mn.sub.y Te Crystals" Journal of Crystal Growth, vol. 71 (1985) pp. 453-455.
Becla, "CdHgMnTe Light Emitting Diodes and Laser Heterostructures", J. Vac. Sci. Technology, A vol. 6(4) Jul./Aug. 1988 pp. 2725-2728.
Kunemund Robert
Tokin Corporation
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