Magnetoelectronic devices utilizing protective capping...

Details Magnetoelectronic devices utilizing protective capping... Magnetoelectronic devices utilizing protective capping...

2006-08-08

2006-08-08

Crane, Sara (Department: 2811)

Active solid-state devices (e.g., transistors, solid-state diode

Responsive to non-electrical signal

Magnetic field

C438S003000, C366S066000

Reexamination Certificate

active

07087972

ABSTRACT:
Magnetoelectronic device structures and methods for fabricating the same are provided. One method comprises forming a first and a second conductor. The first conductor is electrically coupled to an interconnect stack. A first insulating layer is deposited overlying the first conductor and the second conductor. A via is etched to substantially expose the first conductor. A protective capping layer is deposited by electroless deposition within the via and is electrically coupled to the first conductor. A magnetic memory element layer is formed within the via and overlying the second insulating layer and the second conductor.

REFERENCES:
patent: 5017516 (1991-05-01), van der Putten
patent: 5039655 (1991-08-01), Pisharody
patent: 6054329 (2000-04-01), Burghartz et al.
patent: 6211090 (2001-04-01), Durlam et al.
patent: 6555858 (2003-04-01), Jones et al.
patent: 6784510 (2004-08-01), Grynkewich et al.
patent: 6890770 (2005-05-01), Grynkewich et al.
patent: WO 02/058135 (2002-07-01), None
patent: WO 02/058135 (2002-07-01), None

Affiliated with

Also associated with

Rating

Magnetoelectronic devices utilizing protective capping... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Magnetoelectronic devices utilizing protective capping..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Magnetoelectronic devices utilizing protective capping... will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-3667808