Active solid-state devices (e.g. – transistors – solid-state diode – Responsive to non-electrical signal – Magnetic field
Reexamination Certificate
2007-03-20
2007-03-20
Parker, Kenneth (Department: 2815)
Active solid-state devices (e.g., transistors, solid-state diode
Responsive to non-electrical signal
Magnetic field
C257S422000, C257S423000, C257S427000, C257SE27005, C257SE27006, C365S158000
Reexamination Certificate
active
10965952
ABSTRACT:
A ultrathin magnetoelectric transducer and its manufacturing method are provided which enable the quality of mounting to be inspected nondestructively, and can reduce a footprint. The magnetoelectric transducer has a substrate composed of a nonmagnetic substrate, and includes bottom surface connecting electrodes whose leads have a first thickness, and side electrodes which are exposed by dicing and have the first thickness. A more sensitive Hall element has a high-permeability magnetic substrate as the substrate, and includes the bottom surface connecting electrodes whose leads have the first thickness, and the side electrodes exposed by the dicing and having the first thickness. The bottom surface connecting electrodes of the leads with the first thickness are formed across the internal electrodes of adjacent magnetoelectric transducers with maintaining the first thickness. The side electrodes with the first thickness are formed by cutting the center between the adjacent magnetoelectric transducers.
REFERENCES:
patent: 4908685 (1990-03-01), Shibasaki et al.
patent: 6724059 (2004-04-01), Fukunaka
patent: 51-045234 (1976-12-01), None
patent: 1-13211 (1982-10-01), None
patent: 1-15135 (1982-11-01), None
patent: 2-47849 (1983-05-01), None
patent: 3-59571 (1984-01-01), None
patent: 60-037183 (1985-02-01), None
patent: 7-13987 (1986-12-01), None
patent: 01-100443 (1989-07-01), None
patent: 02-033585 (1990-03-01), None
patent: 07-249577 (1995-09-01), None
patent: 10-233539 (1998-09-01), None
patent: 11-121830 (1999-04-01), None
patent: 11-233849 (1999-06-01), None
patent: 11-251657 (1999-09-01), None
patent: 2000-101162 (2000-04-01), None
patent: 2000-150983 (2000-05-01), None
patent: 2002-107382 (2002-04-01), None
patent: 2002-289973 (2002-10-01), None
patent: 2002-299599 (2002-10-01), None
Co-Pending U.S. Appl. No. 10/546,825; Title: Semiconductor Sensor and Method for Manufacturing the Same; filed Oct. 18, 2004.
“National Technical Report”, (1996), vol. 42, No. 4, pp. 84-92.
Translation of Patent Abstracts of Japan for JP 2002-009364 A.
Fukunaka Toshiaki
Yamamoto Atsushi
Asahi Kasei Electronics Co. Ltd.
Finnegan Henderson Farabow Garrett & Dunner L.L.P.
Nguyen Joseph
Parker Kenneth
LandOfFree
Magnetoelectric transducer and its manufacturing method does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Magnetoelectric transducer and its manufacturing method, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Magnetoelectric transducer and its manufacturing method will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-3734025