Magnetoelectric transducer and its manufacturing method

Active solid-state devices (e.g. – transistors – solid-state diode – Responsive to non-electrical signal – Magnetic field

Reexamination Certificate

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Details

C257S422000, C257S423000, C257S427000, C257SE27005, C257SE27006, C365S158000

Reexamination Certificate

active

10965952

ABSTRACT:
A ultrathin magnetoelectric transducer and its manufacturing method are provided which enable the quality of mounting to be inspected nondestructively, and can reduce a footprint. The magnetoelectric transducer has a substrate composed of a nonmagnetic substrate, and includes bottom surface connecting electrodes whose leads have a first thickness, and side electrodes which are exposed by dicing and have the first thickness. A more sensitive Hall element has a high-permeability magnetic substrate as the substrate, and includes the bottom surface connecting electrodes whose leads have the first thickness, and the side electrodes exposed by the dicing and having the first thickness. The bottom surface connecting electrodes of the leads with the first thickness are formed across the internal electrodes of adjacent magnetoelectric transducers with maintaining the first thickness. The side electrodes with the first thickness are formed by cutting the center between the adjacent magnetoelectric transducers.

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Co-Pending U.S. Appl. No. 10/546,825; Title: Semiconductor Sensor and Method for Manufacturing the Same; filed Oct. 18, 2004.
“National Technical Report”, (1996), vol. 42, No. 4, pp. 84-92.
Translation of Patent Abstracts of Japan for JP 2002-009364 A.

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