Magnetoelectric transducer

Details Magnetoelectric transducer Magnetoelectric transducer

1989-03-15

1990-03-13

James, Andrew J.

357 65, 357 67, 357 71, H01L 2722

Patent

active

049086855

ABSTRACT:
A magnetoelectric transducer comprising a group III-V compound semiconductor thin film 14 of 0.1 .mu.m to 10 .mu.m thickness formed as a magnetic field sensing portion on a substrate 12 overlaying an organic insulating layer 13, and a multilayer wire bonding electrode including an ohmic electrode 16 formed on a required area of the thin film and a hard metal layer 17 and a bonding layer 18 which are laminated on the ohmic electrode.

REFERENCES:
patent: 4000842 (1977-01-01), Burns
patent: 4081601 (1978-03-01), Dinella et al.
patent: 4296424 (1981-10-01), Shibasaki et al.
patent: 4609936 (1986-09-01), Scharr et al.
Ohshta, M., "Hall Generators made of InSb-Sn Films", Electrical Engineering in Japan, vol. 93, No. 3, 1973, pp. 112-116.
Sze, S. M., Physics of Semiconductor Devices, John Wiley & Sons, New York, 1981, p. 307.

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