Magneto-resistive type magnetic head with a shunt layer of molyb

Details Magneto-resistive type magnetic head with a shunt layer of molyb Magneto-resistive type magnetic head with a shunt layer of molyb

1994-04-13

1996-04-23

Wolff, John H.

Dynamic magnetic information storage or retrieval

Head

Hall effect

G11B 539

Patent

active

055109411

ABSTRACT:
A magneto-resistive head has an upper shield layer, a lower shield layer spaced a distance from the upper shield layer, a magneto-resistive layer disposed over the lower shield layer, a shunt layer disposed adjacent to the magneto-resistive layer for giving a magnetic bias field to the magneto-resistive layer, and a electrode layer in contact with the magneto-resistance device and the shunt layer for providing an electric current to both of the magneto-resistive layer and the shunt layer electric current. The magneto-resistive layer, the shunt layer and the electrode layer are disposed between the upper shield and the lower shield. The shunt layer consist of molybdenum having a grain size more than 150 angstrom. The shunt layer has low specific resistance. Therefore, the thickness of the shunt layer can be reduced. As a result, the distance between the upper and lower shield layer can be reduced. Consequently, the gap length of the magneto-resistive head is narrower than prior art magnetic heads.

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Oikawa and Amazawa, "Physical Properties of Vacuum Deposited Mo Films," Applied Physics, vol. 47, No. 3, 1976.

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