Magneto-resistive effect element, magnetic sensor using...

Details Magneto-resistive effect element, magnetic sensor using... Magneto-resistive effect element, magnetic sensor using...

2006-04-25

2006-04-25

Heinz, A. J. (Department: 2653)

Dynamic magnetic information storage or retrieval

Head

Magnetoresistive reproducing head

Reexamination Certificate

active

07035058

ABSTRACT:
A giant magneto-resistive effect element includes a lamination layer structure portion (10) in which at least a free layer (4) the magnetization of which is rotated in response to an external magnetic field, a fixed layer (2), an antiferromagnetic layer (1) for fixing the magnetization of the fixed layer (2) and a nonmagnetic layer (3) interposed between the free layer (4) and the fixed layer (2) are laminated with each other. A sense current flows to substantially a lamination layer direction of the lamination layer structure portion (10) and the lamination layer structure portion (10) has disposed thereon a high-resistance layer (R) which crosses a path of the sense current, whereby an element resistance can be increased and a magneto-resistance change amount can be increased. Thus, a magneto-resistive effect element, a magneto-resistive effect type magnetic sensor, a magneto-resistive effect type magnetic head and a magnetic memory become able to increase a magneto-resistive change amount.

REFERENCES:
patent: 5206590 (1993-04-01), Dieny et al.
patent: 5549978 (1996-08-01), Iwasaki et al.
patent: 6219208 (2001-04-01), Gill
patent: 6657828 (2003-12-01), Araki et al.
patent: 2001/0004798 (2001-06-01), Gill

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