Magneto-resistive device with reduced susceptibility to ion...

Details Magneto-resistive device with reduced susceptibility to ion... Magneto-resistive device with reduced susceptibility to ion...

2006-06-06

2006-06-06

Heinz, A. J. (Department: 2653)

Dynamic magnetic information storage or retrieval

Head

Magnetoresistive reproducing head

C360S324100

Reexamination Certificate

active

07057859

ABSTRACT:
A magneto-resistive device is improved in characteristics by removing a surface oxide film to reduce the resistance and reducing an ion beam damage. The magneto-resistive device has a magneto-resistive layer which comprises a tunnel barrier layer, an underlying pinned layer, and an overlying free layer. A non-magnetic layer is formed on the free layer for protection. A composite-layer film comprised of an insulating layer and a damage reducing layer is formed in contact with an effective region which is effectively involved in detection of magnetism in the magneto-resistive layer without overlapping with the effective region. The damage reducing layer is made of a material which includes at least one element, the atomic weight of which is larger than that of silicon. The insulating layer and damage reducing layer do not constitute a magnetic domain control layer for applying a biasing magnetic field to the free layer.

REFERENCES:
patent: 6344955 (2002-02-01), Sato et al.
patent: 6353318 (2002-03-01), Sin et al.
patent: 6545848 (2003-04-01), Terunuma
patent: 6654212 (2003-11-01), Hayakawa
patent: 2002/0048126 (2002-04-01), Shimazawa
patent: A 2001-68759 (2001-03-01), None
Nakashio et al., “Longitudinal bias method using a long distance exchange coupling field in tunnel magnetoresistance junctions”, Journal of Applied Physics, vol. 89, No. 11, pp. 1-3, 2001.

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