Magneto-resistive device with a magnetic multilayer structure

Details Magneto-resistive device with a magnetic multilayer structure Magneto-resistive device with a magnetic multilayer structure

2005-05-10

2005-05-10

Patidar, Jay (Department: 2862)

Electricity: measuring and testing

Magnetic

Magnetometers

C365S158000

Reexamination Certificate

active

06891366

ABSTRACT:
A robust GMR or TMR effect type multilayer structure comprises a free and a pinned ferromagnetic layer, with a wide magnetic field range as required, for example in automotive applications. An odd number of non-adjacent ferromagnetic layers is used in an exchange-biased Artificial Anti-Ferromagnet as the pinned layer, and the exchange biasing layer is made of an IrMn type material.

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