Stock material or miscellaneous articles – All metal or with adjacent metals – Having magnetic properties – or preformed fiber orientation...
Patent
1997-10-06
1999-06-29
Resan, Stevan A.
Stock material or miscellaneous articles
All metal or with adjacent metals
Having magnetic properties, or preformed fiber orientation...
428635, 428692, 428336, 428448, 428450, 428900, 360113, 338 32R, 324252, G11B 05127
Patent
active
059166940
ABSTRACT:
A silicon dioxide passivation film highly resistant to humidity is formed to prevent the deterioration of the magnetic effects, to increase the resistance variation rate and to reduce the internal stresses of the ferromagnetic metal film of the MR element. After forming the ferromagnetic metal film, the silicon dioxide film is formed by a TEOS-O.sub.3 -based atmospheric pressure CVD method in a state where the substrate temperature is kept at or below 350.degree. C. The silicon dioxide film is not doped with phosphorus and sits thickness is kept within 1 .mu.m. On the other hand, apart from the above-described structure, the silicon dioxide film may as well consist of two layers, one doped with and the other not doped with phosphorus. Another method used to form the silicon dioxide film is an HMDS-O.sub.3 -based atmospheric pressure CVD method. As film formation is thereby possible at a substrate temperature of not more than 300.degree. C., the magnetic effects of the ferromagnetic metal film are prevented from deterioration.
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NEC Corporation
Resan Stevan A.
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