Magneto-resistance element

Details Magneto-resistance element Magneto-resistance element

1997-10-06

1999-06-29

Resan, Stevan A.

Stock material or miscellaneous articles

All metal or with adjacent metals

Having magnetic properties, or preformed fiber orientation...

428635, 428692, 428336, 428448, 428450, 428900, 360113, 338 32R, 324252, G11B 05127

Patent

active

059166940

ABSTRACT:
A silicon dioxide passivation film highly resistant to humidity is formed to prevent the deterioration of the magnetic effects, to increase the resistance variation rate and to reduce the internal stresses of the ferromagnetic metal film of the MR element. After forming the ferromagnetic metal film, the silicon dioxide film is formed by a TEOS-O.sub.3 -based atmospheric pressure CVD method in a state where the substrate temperature is kept at or below 350.degree. C. The silicon dioxide film is not doped with phosphorus and sits thickness is kept within 1 .mu.m. On the other hand, apart from the above-described structure, the silicon dioxide film may as well consist of two layers, one doped with and the other not doped with phosphorus. Another method used to form the silicon dioxide film is an HMDS-O.sub.3 -based atmospheric pressure CVD method. As film formation is thereby possible at a substrate temperature of not more than 300.degree. C., the magnetic effects of the ferromagnetic metal film are prevented from deterioration.

REFERENCES:
patent: 4778721 (1988-10-01), Sliemers et al.
patent: 5017403 (1991-05-01), Pang et al.
patent: 5051380 (1991-09-01), Maeda et al.
patent: 5094983 (1992-03-01), Furthaler et al.
patent: 5319247 (1994-06-01), Matsuura
patent: 5401542 (1995-03-01), Kitada et al.
patent: 5459108 (1995-10-01), Doi et al.
patent: 5466495 (1995-11-01), Pronk et al.
Kobayashi, et al., "A Technique for Flattening of Inter-Layer Insulating Films", Applied Physics (in Japanese), vol. 61, No. 11, Nov. (1992).
K. Fujino, et al., "Low Temperature, Atmospheric Pressure CVD Using Hexamethyldisiloxane and Ozone", J. Electrochem. Soc., vol. 139, No. 8, Aug. 1992, pp. 2282-2287.

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