Magneto-resistance effect element with magnetism sensitive...

Details Magneto-resistance effect element with magnetism sensitive... Magneto-resistance effect element with magnetism sensitive...

2006-07-11

2006-07-11

Watko, Julie Anne (Department: 2653)

Dynamic magnetic information storage or retrieval

Head

Magnetoresistive reproducing head

C360S324120

Reexamination Certificate

active

07075755

ABSTRACT:
A magneto-resistance effect element of the present invention allows detection of a micro-bit signal with a high sensitivity. The magneto-resistance effect element is provided with a first magnetic substance layer, a spacer layer stacked on the first magnetic substance layer, a second magnetic substance layer stacked on the spacer, an insulating layer positioned adjacent to a stacked structure comprising the first magnetic substance layer, the spacer layer and the second magnetic substance layer, a gate electrode positioned adjacent to the insulating layer, and a magnetism sensitive region controlled by a voltage applied to the gate electrode.

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patent: 2001-203332 (2001-07-01), None
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D. Chiba, et al., “Properties of (Ga, Mn) As/ (Al, Ga) As/ (Ga, Mn) As Magnetic Trilayer Structures”, Physica E, vol. 10, 2001, pp. 278-282.
H. Ohno, et al., “Electric-Field Control of Ferromagnetism”, NATURE, vol. 408, Dec. 21/28, 2000, pp. 944-946.
D. Chiba, et al., “Properties of Field-Effect Transistors with a III-V Ferromagnetic Semiconductor Channel Layer”, The 7THSymposium on the Physics and Application of Spin-Related Phenomena in Semiconductor, vol. A7, Dec. 17-18, 2001, pp. 25-28 (Extended Abstract).

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