Dynamic magnetic information storage or retrieval – Head – Magnetoresistive reproducing head
Reexamination Certificate
2007-01-09
2007-01-09
Klimowicz, William J (Department: 2627)
Dynamic magnetic information storage or retrieval
Head
Magnetoresistive reproducing head
C360S324200
Reexamination Certificate
active
11376290
ABSTRACT:
A magneto-resistance effect head is provided with a lower conductive layer which is provided with a recessed portion, and a vertical bias layer is provided in the recessed portion. A free layer is provided on the lower conductive layer. On the free layer, layered in the following order are the non-magnetic layer, the fixed layer, the fixing layer, and the upper layer so as not to be placed immediately above the vertical bias layer. The non-magnetic layer, the fixed layer, the fixing layer, and the upper layer are buried in an insulation layer. Furthermore, an upper conductive layer is provided on the upper layer and the insulation layer. In the direction of the magnetic field applied by the vertical bias layer, the free layer is made greater in length than the fixed layer and the free layer is disposed in proximity to the vertical bias layer with the distance between the fixed layer and the vertical bias layer remaining unchanged.
REFERENCES:
patent: 6097579 (2000-08-01), Gill
patent: 6146776 (2000-11-01), Fukuzawa et al.
patent: 6181537 (2001-01-01), Gill
patent: 6266218 (2001-07-01), Carey et al.
patent: 6275362 (2001-08-01), Pinarbasi
patent: 6306266 (2001-10-01), Metin et al.
patent: 6325900 (2001-12-01), Komuro et al.
patent: 6333842 (2001-12-01), Nobuyuki et al.
patent: 6400536 (2002-06-01), Gill
patent: 6411476 (2002-06-01), Lin et al.
patent: 6452204 (2002-09-01), Ishiwata et al.
patent: 6469879 (2002-10-01), Redon et al.
patent: 6487056 (2002-11-01), Gibbons et al.
patent: 6747853 (2004-06-01), Hayashi et al.
patent: 6934132 (2005-08-01), Hayashi et al.
patent: 6999287 (2006-02-01), Hayashi et al.
patent: 7027268 (2006-04-01), Zhu et al.
patent: 2001/0014001 (2001-08-01), Aoshima et al.
patent: 2002/0167767 (2002-11-01), Jayasekara
patent: 2003/0035256 (2003-02-01), Hayashi et al.
patent: 953849 (1999-11-01), None
patent: 2-61572 (1990-03-01), None
patent: 5-94605 (1993-04-01), None
patent: 6-236527 (1994-08-01), None
patent: 10-162327 (1998-06-01), None
patent: 10-255231 (1998-09-01), None
patent: 11-134620 (1999-05-01), None
patent: 11175920 (1999-07-01), None
patent: 11-213355 (1999-08-01), None
patent: 11-232616 (1999-08-01), None
patent: 11316919 (1999-11-01), None
patent: 2000003507 (2000-01-01), None
patent: 2000-40211 (2000-02-01), None
patent: 2000105912 (2000-04-01), None
patent: 2000-163716 (2000-06-01), None
patent: 199-0062685 (1999-07-01), None
Korean Office action dated Aug. 5, 2003 with Japanese translation of the Korean Action and English translation of the Japanese translation.
J. Mooders et al., “Ferromagnetic-insulator-ferromagnetic tunneling: Spin-dependent tunneling and large magnetoresistance in trilayer junctions (invited)”. J. Appl. Phys. 79 (8), Apr. 15, 1996.
D. Thompson et al., “Thin film magnetoresistors in memory, storage, and related applications”, IEEE Transactions on Magnetics, vol. Mag-11. No. 4. Jul. 1975.
Japanese Office Action dated Oct. 26, 2004 with English translation of pertinent portions.
Fujikata Junichi
Hayashi Kazuhiko
Ishi Tsutomu
Ishihara Kunihiko
Ishiwata Nobuyuki
Klimowicz William J
NEC Corporation
Whitham Curtis Christofferson & Cook PC
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