Magneto-resistance effect element magneto-resistance effect...

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Reexamination Certificate

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C428S690000, C428S690000, C428S690000, C428S690000, C428S336000, C324S113000, C360S125330, C338S03200R

Reexamination Certificate

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07018725

ABSTRACT:
A magneto-resistive effect element includes a first ferromagnetic film; a second ferromagnetic film; and a first nonmagnetic film interposed between the first ferromagnetic film and the second ferromagnetic film. The first ferromagnetic film has a magnetization more easily rotatable than a magnetization of the second ferromagnetic film by an external magnetic field. The first ferromagnetic film has an effective magnetic thickness of about 2 nm or less.

REFERENCES:
patent: 5640343 (1997-06-01), Gallagher et al.
patent: 5650958 (1997-07-01), Gallagher et al.
patent: 5686838 (1997-11-01), van den Berg
patent: 5734605 (1998-03-01), Zhu et al.
patent: 5793697 (1998-08-01), Scheuerlein
patent: 5801984 (1998-09-01), Parkin
patent: 5838608 (1998-11-01), Zhu et al.
patent: 5841611 (1998-11-01), Sakakima et al.
patent: 5841692 (1998-11-01), Gallagher et al.
patent: 6436526 (2002-08-01), Odagawa et al.
patent: 6767655 (2004-07-01), Hiramoto et al.
patent: 0 681 338 (1995-11-01), None
patent: 0 910 092 (1999-04-01), None
patent: 1 003 176 (2000-05-01), None
Official Action dated Jul. 27, 2002 for Korean Patent Application No. 10-2000-0033485.
European Search Report, Application No. EP 00 11 2886, dated Mar. 5, 2001.
Patent Abstracts of Japan; vol. 1995, No. 04, May 31, 1995 & JP 07 014710 A (Fujitsu Ltd.), Jan. 17, 1995 abstract.
Sakakima et al.; “Magnetoresistance in CoMdB/Co(Fe)/Cu/Co(Fe) spin-valves”; Journal of Magnetism and Magnetic Materials; vol. 165, No. 1/03, 1997; pp. 108-110.
Lu et al.; “Bias voltage and temperature dependence of magnetotunneling effect”; 1998 American Institute of Physics; Jun. 1, 1998; pp. 6515-6517/.
European Search Report, Application No. EP 00 11 2886, dated Oct. 8, 2001.

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